THEORETICAL-STUDY OF MODE TRANSITION BETWEEN 2D-NUCLEATION AND STEP FLOW IN MBE GROWTH OF GAAS

被引：116

作者：

NISHINAGA, T ^{[1
]}

CHO, KI ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 01期

关键词：

D O I：

10.1143/JJAP.27.L12

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L12 / L14

页数：3

共 13 条

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J].

ABBINK, HC ;

BROUDY, RM ;

MCCARTHY, GP .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4673-&

[2] ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH [J].

CLARKE, S ;

VVEDENSKY, DD .

PHYSICAL REVIEW LETTERS, 1987, 58 (21) :2235-2238

[3] SURFACE PROCESSES CONTROLLING GROWTH OF GAXIN1-XAS AND GAXIN1-XP ALLOY-FILMS BY MBE [J].

FOXON, CT ;

JOYCE, BA .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (01) :75-83

[4] HIGH SUPERSATURATION LAYER-BY-LAYER GROWTH - APPLICATION TO SI MBE [J].

FUENZALIDA, V ;

EISELE, I .

JOURNAL OF CRYSTAL GROWTH, 1986, 74 (03) :597-604

[5] THERMODYNAMIC ASPECTS OF MOLECULAR-BEAM EPITAXY - HIGH-TEMPERATURE GROWTH IN THE GAAS/GA1-XALXAS SYSTEM [J].

HECKINGBOTTOM, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :572-575

[6]

HIRTH JP, 1963, CONDENSATION EVAPORA, V11, P87

[7]

KASPER E, 1982, APPL PHYS A-MATER, V28, P129, DOI 10.1007/BF00617144

[8]

LEWIS B, CRYSTAL GROWTH, P23

[9] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS [J].

NEAVE, JH ;

DOBSON, PJ ;

JOYCE, BA ;

ZHANG, J .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :100-102

[10] VAPOR-PRESSURES OF ARSENIC OVER INAS(C) AND GAAS (C) - ENTHALPIES OF FORMATION OF INAS(C) AND GAAS(C) [J].

PUPP, C ;

MURRAY, JJ ;

POTTIE, RF .

JOURNAL OF CHEMICAL THERMODYNAMICS, 1974, 6 (02) :123-134

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