FEMTOSECOND DYNAMICS OF LASER-INDUCED PHASE-TRANSITION OF THE GAAS SURFACE-LAYER TO A CENTROSYMMETRIC PHASE

被引：15

作者：

GOVORKOV, SV ^{[1
]}

EMELYANOV, VI ^{[1
]}

KOROTEEV, NI ^{[1
]}

SHUMAY, IL ^{[1
]}

机构：

[1] MV LOMONOSOV STATE UNIV,CTR INT LASER,MOSCOW 119899,USSR

来源：

JOURNAL OF LUMINESCENCE | 1992年 / 53卷 / 1-6期

关键词：

D O I：

10.1016/0022-2313(92)90128-V

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Recently we observed ultrafast laser-induced phase transition (on a time scale less than 100 fs) to a centrosymmetric semiconductor-like phase at the GaAs surface [1,2] by using time-resolved second harmonic generation in reflection. A phenomenological model describing this phase transition is developed. The new phase exists during the first 1 ps after laser excitation due to high plasma carrier density and lattice stress, the lattice temperature remaining well below the melting threshold.

引用

页码：153 / 158

页数：6

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