THE POSSIBILITIES AND LIMITATIONS OF ION-BEAM ETCHING OF YBA2CU3O7-X THIN-FILMS AND MICROBRIDGES

被引：28

作者：

SCHNEIDEWIND, H

SCHMIDL, F

LINZEN, S

SEIDEL, P

机构：

[1] Institut für Festkörperphysik, Friedrich-Schiller-Universität, D-07743 Jena

来源：

PHYSICA C | 1995年 / 250卷 / 1-2期

关键词：

D O I：

10.1016/0921-4534(95)00282-0

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Patterning of high-T-c thin films and multilayer systems is a key technology for device application. We use Ar+ ion-beam etching for thin-film patterning and carried out an optimization of the main etching parameters like ion energy and substrate temperature for damage-free etching in the case of patterning microbridges. To investigate the behavior of surface-etched films we compared electrical measurements obtained on step by step thinned YBa2Cu3O7-x (YBCO) films to those deposited with different thicknesses and carried out X-ray diffraction measurements at the etched surfaces. The damaging effect on surface by ion-beam etching was investigated in terms of measuring the critical temperature and critical current density of thinned microbridges. We show examples how to use this technology in device modification.

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页码：191 / 201

页数：11

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