THE POSSIBILITIES AND LIMITATIONS OF ION-BEAM ETCHING OF YBA2CU3O7-X THIN-FILMS AND MICROBRIDGES

被引：28

作者：

SCHNEIDEWIND, H

SCHMIDL, F

LINZEN, S

SEIDEL, P

机构：

[1] Institut für Festkörperphysik, Friedrich-Schiller-Universität, D-07743 Jena

来源：

PHYSICA C | 1995年 / 250卷 / 1-2期

关键词：

D O I：

10.1016/0921-4534(95)00282-0

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Patterning of high-T-c thin films and multilayer systems is a key technology for device application. We use Ar+ ion-beam etching for thin-film patterning and carried out an optimization of the main etching parameters like ion energy and substrate temperature for damage-free etching in the case of patterning microbridges. To investigate the behavior of surface-etched films we compared electrical measurements obtained on step by step thinned YBa2Cu3O7-x (YBCO) films to those deposited with different thicknesses and carried out X-ray diffraction measurements at the etched surfaces. The damaging effect on surface by ion-beam etching was investigated in terms of measuring the critical temperature and critical current density of thinned microbridges. We show examples how to use this technology in device modification.

引用

页码：191 / 201

页数：11

共 35 条

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