HIGH-T-C JOSEPHSON JUNCTIONS AND DC SQUIDS

被引:14
作者
Seidel, P. [1 ]
Heinz, E. [1 ]
Schmidl, F. [1 ]
Zach, K. [1 ]
Koehler, H. -J [1 ]
Doerrer, L. [1 ]
Linzen, S. [1 ]
Koehler, T. [1 ]
Michalke, W. [2 ]
Manzel, M. [2 ]
Steinbeiss, E. [2 ]
Bruchlos, H. [2 ]
Kley, E. -B. [3 ]
Fuchs, H. -J. [3 ]
机构
[1] Univ Jena, Inst Festkorperphys, Helinholtzweg 5,D-O-6900, Jena, Frg, Germany
[2] Hochtechnol eV, Inst Phys, Helinholtzweg 4,D-O-6900, Jena, Frg, Germany
[3] Univ Jena, Inst Angew Phys, Max Wien Pl 1,D-O-6900, Jena, Frg, Germany
关键词
D O I
10.1109/77.233429
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Step edge Josephson junctions and dc SQUIDs made of laser ablated and sputtered YBCO films and grain boundary junctions in polycristalline TBCCO films have been investigated. Bridges in the micrometer scale have been structured by laser or ion beam etching as well as by the inhibit-layer technique. The Josephson junctions are characterized comparing I-V measurements under microwave irradiation to calculations within RSJ model with finite capacitance and white noise. The dependence of the ICRN product on temperature can be fitted to microscopic theory of SNINS or SNS junctions with additional temperature-independent pair breaking. Flux modulation and noise properties of the dc SQUIDs at 77 K are shown.
引用
收藏
页码:2353 / 2356
页数:4
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