THE LATTICE POSITION OF DIFFUSED ZN IN INP

被引：9

作者：

LENNARD, WN

SWANSON, ML

EGER, D

SPRINGTHORPE, AJ

SHEPHERD, FR

机构：

[1] UNIV WESTERN ONTARIO, DEPT PHYS, LONDON N6A 3K7, ONTARIO, CANADA

[2] UNIV N CAROLINA, CHAPEL HILL, NC 27514 USA

[3] BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 01期

关键词：

D O I：

10.1007/BF02652223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1 / 3

页数：3

共 9 条

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[6]

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[7]

THEISEN R, 1967, TABLES XRAY MASS ATT

[8] DIFFUSION PROFILES OF ZINC IN INDIUM-PHOSPHIDE [J].

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HOOPER, A .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (15) :1806-1821

[9] DETERMINATION OF SUBSTITUTIONAL DOPANT AND HOLE CONCENTRATIONS IN ZN-DIFFUSED SINGLE-CRYSTAL INP [J].

WILLIAMS, RS ;

BARNES, PA ;

FELDMAN, LC .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :760-762

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