HYDROGEN ADSORPTION ON SI(100)-2X1 SURFACES STUDIED BY ELASTIC RECOIL DETECTION ANALYSIS

被引：98

作者：

OURA, K

YAMANE, J

UMEZAWA, K

NAITOH, M

SHOJI, F

HANAWA, T

机构：

[1] Electron Beam Laboratory, Faculty of Engineering, Osaka University, Suita

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.41.1200

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrogen adsorption on a clean Si(100)-2×1 surface has been studied by the high-energy ion- beam method (6-MeV F3+) combined with low-energy electron diffraction. We report that (1) the saturation coverage of hydrogen on a clean Si(100)-2×1 surface kept at room temperature is 1.850.18 monolayers (ML), and (2) the first 1-ML hydrogen adsorbs rather quickly, leading to a 2×1-H phase, while adsorption of more hydrogen beyond 1 ML occurs very slowly, approaching a saturated structure of 1×1-H. The effect of substrate temperatures on adsorption is also studied. © 1990 The American Physical Society.

引用

页码：1200 / 1203

页数：4

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