IONIZED-CLUSTER BEAM DEPOSITION AND EPITAXY

被引：20

作者：

TAKAGI, T

YAMADA, I

MATSUBARA, K

机构：

[1] Department of Electronics, Kyoto University, Sakyo, Kyoto

来源：

THIN SOLID FILMS | 1979年 / 58卷 / 01期

关键词：

D O I：

10.1016/0040-6090(79)90199-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Film formation by ionized-cluster beam deposition and epitaxy is characterized by various processes including sputtering, substrate surface heating effects, ion implantation effects and adatom migration. These processes can be utilized to form films of good crystalline quality. The technology is applicable for the formation of various kinds of films such as metals, semiconductors and insulators. The films show unique characteristics which cannot be obtained by conventional methods. A general review of ionized-cluster beam deposition and epitaxy is given and its application to electron devices is described. © 1979.

引用

页码：9 / 19

页数：11