INTERPRETATION OF ELECTRICAL-PROPERTIES OF B-SI COMPOUNDS USING A MODEL OF MEDIUM RANGE DISORDER

被引：8

作者：

PISTOULET, B

ROBERT, JL

DUSSEAU, JM

ROCHE, F

GIRARD, P

ENSUQUE, L

机构：

[1] Centre d'Etudes d'Electronique des Solides, Associé au Centre National de la Recherche Scientifique, Université des Sciences et Techniques du Languedoc

来源：

JOURNAL OF THE LESS-COMMON METALS | 1979年 / 67卷 / 01期

关键词：

D O I：

10.1016/0022-5088(79)90082-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electrical properties of B14Si are interpreted by using a model of medium range disorder; the d.c. and a.c. conductivities, the photoconductivity and the thermoelectric power were measured over a wide range of temperatures. The data can be explained well by the existence of a deep dominantlevel of energy Ea = 0.38eV and a disorder parameter Γ ≈ 0.045 eV. © 1979.

引用

页码：131 / 135

页数：5

共 8 条

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PISTOULET, B
ROBERT, JL
DUSSEAU, JM
ENSUQUE, L
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[J]. SOLID-STATE ELECTRONICS, 1973, 16 (09) : 1029 - 1035

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