DIELECTRIC PROPERTIES OF SILICON P-N-JUNCTIONS

被引：2

作者：

BARSONY, I ^{[1
]}

JONSCHER, AK ^{[1
]}

机构：

[1] UNIV LONDON,CHELSEA COLL,DEPT PHYS,LONDON SW6 5PR,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 02期

关键词：

D O I：

10.1016/0038-1101(78)90280-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：471 / 473

页数：3

共 12 条

[1] STUDIES OF DEFECTS INTRODUCED BY ELECTRON-IRRADIATION AT 4.2DEGREESK IN P-SILICON BY THERMALLY STIMULATED CAPACITANCE TECHNIQUE [J].

BRABANT, JC ;

PUGNET, M ;

BARBOLLA, J ;

BROUSSEAU, M .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) :4809-4813

[2] APPLICATION OF DISTRIBUTED EQUILIBRIUM EQUIVALENT CIRCUIT MODEL TO SEMICONDUCTOR JUNCTIONS [J].

FORBES, L ;

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (12) :1036-+

[3] PHYSICAL BASIS OF DIELECTRIC LOSS [J].

JONSCHER, AK .

NATURE, 1975, 253 (5494) :717-719

[4] NEW INTERPRETATION OF DIELECTRIC LOSS PEAKS [J].

JONSCHER, AK .

NATURE, 1975, 256 (5518) :566-567

[5] NEW MODEL OF DIELECTRIC LOSS IN POLYMERS [J].

JONSCHER, AK .

COLLOID AND POLYMER SCIENCE, 1975, 253 (03) :231-250

[6]

JONSCHER AK, NATURE LONDON

[7]

JONSCHER AK, UNPUBLISHED

[8] APPLICATION OF KRAMERS-KRONIG RELATIONS TO INTERPRETATION OF DIELECTRIC DATA [J].

LOVELL, R .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (23) :4378-4384

[9] ADMITTANCE OF P-N-JUNCTIONS CONTAINING TRAPS [J].

OLDHAM, WG ;

NAIK, SS .

SOLID-STATE ELECTRONICS, 1972, 15 (10) :1085-+

[10] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON [J].

SAH, CT ;

FORBES, L ;

ROSIER, LI ;

TASCH, AF ;

TOLE, AB .

APPLIED PHYSICS LETTERS, 1969, 15 (05) :145-+

← 1 2 →