PROGRESS IN DEEP-ETCH SYNCHROTRON RADIATION LITHOGRAPHY

被引：49

作者：

EHRFELD, W

BLEY, P

GOTZ, F

MOHR, J

MUNCHMEYER, D

SCHELB, W

BAVING, HJ

BEETS, D

机构：

[1] DEGUSSA AG,FACHBEREICH MET,D-6450 HANAU 1,FED REP GER

[2] NEDERLANDS PHILIPS BEDRIJVEN,I&E LITHOG,5600 MD EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 01期

关键词：

D O I：

10.1116/1.584039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：178 / 182

页数：5

共 9 条

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[Anonymous], 1991, CRC HDB SOLUBILITY P

[2]

Becker E. W., 1986, Microelectronic Engineering, V4, P35, DOI 10.1016/0167-9317(86)90004-3

[3]

BECKER EW, 1985, KFK3961 KERN FORSCH

[4]

BECKER EW, 1984, KFK3732 KERN FORSCH

[5] MASK MAKING FOR SYNCHROTRON RADIATION LITHOGRAPHY. [J].

Ehrfeld, W. ;

Glashauser, W. ;

Muenchmeyer, D. ;

Schelb, W. .

Microelectronic Engineering, 1986, 5 (1-4) :463-470

[6]

EHRFELD W, 1986, IN PRESS J MEMBR SCI

[7]

Heuberger A., 1986, Microelectronic Engineering, V5, P3, DOI 10.1016/0167-9317(86)90026-2

[8]

Munchmeyer D., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V803, P72, DOI 10.1117/12.941277

[9]

Norris T. S., 1985, Microelectronic Engineering, V3, P85, DOI 10.1016/0167-9317(85)90013-9

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