ELECTRICAL CONDUCTIVITY AND PHOTOCONDUCTIVITY RELAXATIONS IN CHEMICALLY DEPOSITED CDS LAYERS

被引：9

作者：

PAVASKAR, N

MENEZES, C

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1970年 / 9卷 / 02期

关键词：

D O I：

10.1143/JJAP.9.212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：212 / &

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[1] PHOTOCONDUCTIVITY AND CRYSTAL IMPERFECTIONS IN CADMIUM SULFIDE CRYSTALS .2. DETERMINATION OF CHARACTERISTIC PHOTOCONDUCTIVITY QUANTITIES
BUBE, RH
[J]. JOURNAL OF CHEMICAL PHYSICS, 1955, 23 (01) : 18 - 25
[2] PHOTOCONDUCTIVITY SPEED OF RESPONSE FOR HIGH INTENSITY EXCITATION IN CADMIUM SULFIDE AND SELENIDE
BUBE, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1237 - 1242
[3] BUBE RH, PHOTOCONDUCTIVITY SO, P230
[4] TRAPPING OF MINORITY CARRIERS IN SILICON .2. N-TYPE SILICON
HAYNES, JR
HORNBECK, JA
[J]. PHYSICAL REVIEW, 1955, 100 (02): : 606 - 615
[5] ELECTRICAL AND PHOTOCONDUCTING PROPERTIES OF CHEMICALLY DEPOSITED CDS THIN LAYERS
PAVASKAR, N
MENEZES, C
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (07) : 743 - &