METAL BASE TRANSISTOR OF IN/BI (BA, RB)O3/SRTIO3 (NB)

被引：9

作者：

ABE, H

TODA, F

OGIWARA, M

机构：

[1] Research Laboratory, Oki Electric Industry Ltd., Hachioji, Tokyo

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 03期

关键词：

D O I：

10.1109/55.215124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we report, for the first time, the large current gain of the metal base transistor using Bi(Ba, Rb)03 and oxide semiconductors. I-V curves of a Bi(Ba, Rb)O3 base transistor in common-base configuration were studied from room temperature to 30 K. Current gain alpha approximately 1 was obtained at 50 K. Transport behavior was discussed by analysis of threshold voltages and derivatives dI(c)/dV(cb).

引用

页码：100 / 102

页数：3

共 9 条

[1] BALLISTIC HOT-ELECTRON TRANSISTORS [J].

HEIBLUM, M ;

FISCHETTI, MV .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1990, 34 (04) :530-549

[2]

KAWASAKI R, 1991, IEICE TRANS COMMUN, V74, P2004

[3] OPTICAL-ABSORPTION AND TRANSPORT IN SEMICONDUCTING SRTIO3 [J].

LEE, C ;

DESTRY, J ;

BREBNER, JL .

PHYSICAL REVIEW B, 1975, 11 (06) :2299-2310

[4] AN INDUCED BASE HOT-ELECTRON TRANSISTOR [J].

LURYI, S .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) :178-180

[5]

MEAD CA, 1960, P IRE, V48, P359

[6]

OGIWARA M, 1992, C SOLID STATE DEVICE, P723

[7] SUPERCONDUCTING AND NORMAL STATES OF BA1-XKXBIO3 STUDIED BY HIGH-QUALITY THIN-FILMS [J].

SATO, H ;

IDO, T ;

TAJIMA, S ;

YOSIDA, M ;

TANABE, K ;

UCHIDA, S .

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 1991, 185 :1343-1344

[8] SUPERCONDUCTING ENERGY-GAP AND A NORMAL-STATE EXCITATION IN BA0.6K0.4BIO3 [J].

SCHLESINGER, Z ;

COLLINS, RT ;

CALISE, JA ;

HINKS, DG ;

MITCHELL, AW ;

ZHENG, Y ;

DABROWSKI, B ;

BICKERS, NE ;

SCALAPINO, DJ .

PHYSICAL REVIEW B, 1989, 40 (10) :6862-6866

[9] APPRAISAL OF SEMICONDUCTOR-METAL-SEMICONDUCTOR TRANSISTOR [J].

SZE, SM ;

GUMMEL, HK .

SOLID-STATE ELECTRONICS, 1966, 9 (08) :751-&

← 1 →