INFERIOR ELECTRONIC-PROPERTIES OF RF-SPUTTERED ALPHA-SI-H FILMS WITH ONLY THE 2000-CM-1 IR ABSORPTION-BAND

被引:13
作者
OGUZ, S
PAUL, DK
BLAKE, J
COLLINS, RW
LACHTER, A
YACOBI, BG
PAUL, W
机构
来源
JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期
关键词
D O I
10.1051/jphyscol:19814150
中图分类号
学科分类号
摘要
引用
收藏
页码:679 / 682
页数:4
相关论文
共 5 条
[1]  
Glang LI, 1970, HDB THIN FILM TECHNO, P4
[2]   EFFECT OF HYDROGEN CONTENT ON THE PROPERTIES OF REACTIVELY SPUTTERED AMORPHOUS SI-H [J].
JEFFREY, FR ;
SHANKS, HR ;
DANIELSON, GC .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :261-266
[3]   CONTROL OF DIHYDRIDE BOND DENSITY IN REACTIVE SPUTTERED AMORPHOUS-SILICON [J].
JEFFREY, FR ;
SHANKS, HR ;
DANIELSON, GC .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :7034-7038
[4]   REVERSIBLE CHANGES IN THE OSCILLATOR-STRENGTHS OF SI-H VIBRATIONS IN A-SI-H INDUCED BY HE+-ION BOMBARDMENT [J].
OGUZ, S ;
ANDERSON, DA ;
PAUL, W ;
STEIN, HJ .
PHYSICAL REVIEW B, 1980, 22 (02) :880-885
[5]  
PAUL W, UNPUB SOLAR ENERGY M