SEMICONDUCTOR PROPERTIES OF AG2O FILM FORMED ON THE SILVER ELECTRODE IN 1-M-NAOH SOLUTION

被引：39

作者：

JIANG, ZY

HUANG, SY

QIAN, B

机构：

[1] Department of Chemistry, Fudan University, Shanghai

来源：

ELECTROCHIMICA ACTA | 1994年 / 39卷 / 16期

关键词：

SILVER ELECTRODE; SEMICONDUCTOR PROPERTIES; PHOTOOXIDATION; PHOTOCURRENT; RAMAN SPECTROSCOPY;

D O I：

10.1016/0013-4686(94)E0149-I

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The semiconductor properties of the Ag2O film formed on silver electrodes in 1 M NaOH solution have been investigated by a photoelectrochemical method. The bandgaps and flatband potential of the film were determined. The results of in situ Raman spectroscopy proved that the photo-oxidation process of Ag2O occurs at potentials higher than the flatband potential of 0.23 V vs. Hg/HgO, 1 M OH- electrode.

引用

页码：2465 / 2470

页数：6

共 32 条

[1]

BECERRA JG, 1990, ELECTROCHIM ACTA, V35, P595

[2]

BECERRA JG, 1988, ELECTROCHIM ACTA, V33, P1431

[3] TEXTURE GROWTH AND ORIENTATION OF ANODICALLY FORMED SILVER OXIDES [J].