NOVEL SELECTIVE AREA GROWTH OF ALGAAS AND ALAS WITH HCL-GAS BY MOVPE

被引:26
作者
SHIMOYAMA, K
INOUE, Y
FUJII, K
GOTOH, H
机构
[1] Tsukuba Opto-electronics Laboratory, Research Center, Mitsubishi Kasei Corp., Ushiku, Ibaraki, 300-12
关键词
D O I
10.1016/0022-0248(92)90465-U
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Selective area growth of AlGaAs and AlAs was successfully demonstrated in the conventional MOVPE (TMG/TMA/AsH3/H2) system by introducing a small quantity of HCl gas during the epitaxial growth. Highly selective epitaxy (HSE) for AlxGa1-xAs with high Al composition, even for AlAs, was achieved using wide passivation masks (approximately 200 mum). The effective role of HCl in the HSE of AlAs can be explained by an suppression effect of reaction between the Al containing species and mask material. The growth of AlGaAs with or without HCl gas was studied over the temperature range of 500-800-degrees-C on unmasked substrates. The new method called HSE has provided good surface morphology and excellent uniformity of thickness and Al composition. The electrical and optical characteristics of epitaxially grown layers by the HSE method were essentially the same as those of the conventionally grown layers.
引用
收藏
页码:235 / 242
页数:8
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