ROOM-TEMPERATURE 600MW CW OUTPUT POWER PER FACET FROM SINGLE GAINAS/GAAS/GAINP LARGE-AREA LASER-DIODE GROWN BY CBE

被引：15

作者：

MAUREL, P ^{[1
]}

GARCIA, JC ^{[1
]}

REGRENY, P ^{[1
]}

HIRTZ, JP ^{[1
]}

VASSILAKIS, E ^{[1
]}

PARENT, A ^{[1
]}

BALDY, M ^{[1
]}

CARRIERE, C ^{[1
]}

机构：

[1] THOMSON CSF,THOMSON HYBRIDES,F-91404 ORSAY,FRANCE

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 01期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19930060

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Continuous wave output power levels of 600 mW at 25-degrees-C are reported from 100 mum wide, 300 mum long GaInAs/GaAs/GaInP large area laser diodes grown by CBE without any facet treatment. At these levels, the delivered current is 2A, with an associated voltage of less than 1.7 V. The characteristic temperature of the structure is 95 K.

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页码：91 / 93

页数：3

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