NEW MATERIALS FOR DIODE-LASER PUMPING OF SOLID-STATE LASERS

被引：28

作者：

WANG, CA

GROVES, SH

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1992年 / 28卷 / 04期

关键词：

D O I：

10.1109/3.135213

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We review recent progress in the development of new materials for III-V semiconductor diode lasers useful for pumping solid-state lasers. All of the diode lasers discussed are grown on GaAs substrates. Particular emphasis is placed on the performance and reliability of high-CW-power strained-layer InGaAs-AlGaAs diode lasers emitting in the new wavelength range between 0.87 and 1.1-mu-m, improved resistance to degradation of 0.78 to 0.87-mu-m diode lasers afforded by the strained-layer AlInGaAs-AlGaAs and lattice-matched GaInAsP-GaInP materials systems and improved performance of visible diode lasers utilizing the materials systems GaInP-AlGaInP.

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收藏

页码：942 / 951

页数：10

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