1.48-MU-M HIGH-POWER INGAAS INGAASP MQW LDS FOR ER-DOPED FIBER AMPLIFIERS

被引：10

作者：

ASANO, H ^{[1
]}

TAKANO, S ^{[1
]}

KAWARADANI, M ^{[1
]}

KITAMURA, M ^{[1
]}

MITO, I ^{[1
]}

机构：

[1] NEC CORP LTD,DIV CMPD SEMICOND DEVICE,KAWASAKI,KANAGAWA 213,JAPAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 05期

关键词：

D O I：

10.1109/68.93863

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optimum device design for a low driving current as well as high-power operation is reported for 1.48-mu-m InGaAs/InGaAsP multiple-quantum-well LD's. A record high CW output power of 250 mW was obtained for a 1.8-mm-long cavity MQW-DC-PBH LD. 100-mW APC aging tests have been carried out at 20, 50, and 70-degrees-C.

引用

页码：415 / 417

页数：3

共 5 条

[1] HIGH-POWER OPERATION IN INGAAS SEPARATE CONFINEMENT HETEROSTRUCTURE QUANTUM WELL LASER-DIODES [J].

KITAMURA, M ;

TAKANO, S ;

SASAKI, T ;

YAMADA, H ;

MITO, I .

APPLIED PHYSICS LETTERS, 1988, 53 (01) :1-3

[2]

MITO I, 1989, TECH DIG IOOC89

[3] HIGH-POWER OUTPUT 1.48-1.51 MU-M CONTINUOUSLY GRADED INDEX SEPARATE CONFINEMENT STRAINED QUANTUM-WELL LASERS [J].

TANBUNEK, T ;

LOGAN, RA ;

OLSSON, NA ;

TEMKIN, H ;

SERGENT, AM ;

WECHT, KW .

APPLIED PHYSICS LETTERS, 1990, 57 (03) :224-226

[4]

THIJS PJA, 1990, C OPT FIBER COMMUN S

[5]

YAMAGUCHI M, 1985, HIGH POWER CW OPERAT

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