DEPENDENCE OF THRESHOLD CURRENT-DENSITY ON QUANTUM WELL COMPOSITION FOR STRAINED-LAYER INGAAS-GAAS LASERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：49

作者：

BEERNINK, KJ ^{[1
]}

YORK, PK ^{[1
]}

COLEMAN, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 25期

关键词：

D O I：

10.1063/1.101986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2585 / 2587

页数：3

共 19 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES
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[2] HIGH-POWER PHASE-LOCKED INGAAS STRAINED-LAYER QUANTUM WELL HETEROSTRUCTURE PERIODIC LASER ARRAY
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[3] CHARACTERIZATION OF INGAAS-GAAS STRAINED-LAYER LASERS WITH QUANTUM WELLS NEAR THE CRITICAL THICKNESS
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YORK, PK
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[4] TWO-DIMENSIONAL ARRAY OF HIGH-POWER STRAINED QUANTUM WELL LASERS WITH LAMBDA=0.95-MU-M
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[J]. APPLIED PHYSICS LETTERS, 1989, 54 (26) : 2637 - 2638
[5] CONDITIONS FOR UNIFORM GROWTH OF GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION IN A VERTICAL REACTOR
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2249 - 2252
[6] GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (24) : 1659 - 1660
[7] RIDGE WAVE-GUIDE INJECTION-LASER WITH A GALNAS STRAINED-LAYER QUANTUM-WELL (LAMBDA=1-MU-M)
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FEKETE, D
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (12) : 714 - 716
[8] LONG-LIVED INGAAS QUANTUM WELL LASERS
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CHEN, YC
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[J]. APPLIED PHYSICS LETTERS, 1989, 54 (19) : 1861 - 1862
[9] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 967 - 969
[10] OMVPE GROWTH OF INP AND GA0.47IN0.53AS USING ETHYLDIMETHYLINDIUM
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (02) : 91 - 96

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