LOW-FREQUENCY NOISE IN 6H-SIC MOSFETS

The noise spectra for n-channel, depletion-mode MOSFETs fabricated in 6H-SiC material were measured from 1-10(5) Hz at room temperature; Devices were biased in the linear regime, where the noise spectra was found to be dependent upon the drain-to-source bias current density. At a drain-to-source current of 50 mu A for MOSFETs with a W/L of 400 mu m/4 mu m, the measured drain-to-source noise power spectral density was found to be A/f(lambda), with A being 2.6 x 10(-12) V-2, and lambda being between 0.73 and 0.85, indicating a nonuniform spatial trap density skewed towards the oxide-semiconductor interface. The measured Hooge parameter (alpha(H)) was 2 x 10(-5). This letter represents the first reported noise characterization of 6H-SiC MOSFET's.