NOVEL PROCESS FOR EMITTER-BASE-COLLECTOR SELF-ALIGNED HETEROJUNCTION BIPOLAR-TRANSISTOR USING A PATTERN-INVERSION METHOD

被引:4
作者
TANAKA, S
MADIHIAN, M
TOYOSHIMA, H
HAYAMA, N
HONJO, K
机构
[1] NEC, Kawasaki, Jpn, NEC, Kawasaki, Jpn
关键词
D O I
10.1049/el:19870403
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
4
引用
收藏
页码:562 / 564
页数:3
相关论文
共 4 条
[1]   GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS USING A SELF-ALIGNED SUBSTITUTIONAL EMITTER PROCESS [J].
CHANG, MF ;
ASBECK, PM ;
MILLER, DL ;
WANG, KC .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) :8-10
[2]   EMITTER BASE COLLECTOR SELF-ALIGNED HETEROJUNCTION BIPOLAR-TRANSISTORS USING WET ETCHING PROCESS [J].
EDA, K ;
INADA, M ;
OTA, Y ;
NAKAGAWA, A ;
HIROSE, T ;
YANAGIHARA, M .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :694-696
[3]   SELF-ALIGNED ALGAAS/GAAS HBT WITH INGAAS EMITTER CAP LAYER [J].
NAGATA, K ;
NAKAJIMA, O ;
NITTONO, T ;
ITO, H ;
ISHIBASHI, T .
ELECTRONICS LETTERS, 1987, 23 (02) :64-65
[4]  
OSHIMA T, 1985, 1985 IEEE GAAS IC S, P53