CHEMICAL EFFECTS IN QUANTITATIVE AUGER ANALYSIS OF PHOSPHORUS IN SILICON AND SILICON DIOXIDE

被引:7
作者
OGATA, H
KANAYAMA, K
FUJIWARA, K
机构
关键词
D O I
10.1016/0378-5963(80)90055-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
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页码:55 / 61
页数:7
相关论文
共 4 条
[1]   GENERAL FORMALISM FOR QUANTITATIVE AUGER ANALYSIS [J].
CHANG, CC .
SURFACE SCIENCE, 1975, 48 (01) :9-21
[2]   QUANTITATIVE AUGER ANALYSIS OF ION-IMPLANTED BORON AND ARSENIC IN POLYCRYSTALLINE SILICON [J].
FUJIWARA, K ;
OHTANI, M ;
KANAYAMA, K ;
OGATA, H .
SURFACE SCIENCE, 1976, 61 (02) :435-442
[3]  
GIBBONS JF, 1975, PROJECTED RANGE STAT
[4]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI