DISORDERING OF GA0.47IN0.53AS/INP MULTIPLE QUANTUM WELL LAYERS BY SULFUR DIFFUSION

被引：18

作者：

PAPE, IJ

WA, PLK

DAVID, JPR

CLAXTON, PA

ROBSON, PN

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 19期

关键词：

D O I：

10.1049/el:19880827

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1217 / 1218

页数：2

共 4 条

[1] LOW-LOSS INGAAS/INP MULTIPLE QUANTUM-WELL OPTICAL ELECTROABSORPTION WAVE-GUIDE MODULATOR [J].

KOREN, U ;

MILLER, BI ;

KOCH, TL ;

EISENSTEIN, G ;

TUCKER, RS ;

BARJOSEPH, I ;

CHEMLA, DS .

APPLIED PHYSICS LETTERS, 1987, 51 (15) :1132-1134

[2] DIFFUSION-INDUCED DISORDERING OF GA0.47IN0.53AS/INP MULTIPLE QUANTUM WELLS WITH ZINC [J].

PAPE, IJ ;

WA, PLK ;

DAVID, JPR ;

CLAXTON, PA ;

ROBSON, PN .

ELECTRONICS LETTERS, 1988, 24 (15) :910-911

[3] AN OPEN TUBE METHOD OF ZN DIFFUSION IN III-V-COMPOUNDS [J].

PHATAK, SB .

ELECTRON DEVICE LETTERS, 1982, 3 (05) :132-134

[4] DISORDERING OF GA1-XALXAS-GAAS QUANTUM WELL STRUCTURES BY DONOR SULFUR DIFFUSION [J].

RAO, EVK ;

THIBIERGE, H ;

BRILLOUET, F ;

ALEXANDRE, F ;

AZOULAY, R .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :867-869

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