ANNEALING BEHAVIOR OF SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD

被引：6

作者：

KAMADA, T ^{[1
]}

HIRAO, T ^{[1
]}

KITAGAWA, M ^{[1
]}

SETSUNE, K ^{[1
]}

WASA, K ^{[1
]}

IZUMI, T ^{[1
]}

机构：

[1] TOKAI UNIV,FAC ENGN,DEPT ELECTR,HIRATSUKA,KANAGAWA 25912,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1988年 / 33-4卷

关键词：

Films--Chemical Vapor Deposition - Heat Treatment--Annealing - Integrated Circuits; VLSI--Fabrication - Silicon Compounds--Thin Films - Solids--Structure;

D O I：

10.1016/0169-4332(88)90421-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The influence of thermal annealing on the bond configuration and structural properties of silicon nitride (SiN) and silicon oxynitride (SiON) films prepared by the electron cyclotron resonance plasma CVD (ECR p-CVD) method have been studied. Both the SiN and SiON films deposited at high microwave powers in which the N-H bonds are predominant have been found to be thermally stable even after annealing at 900°C from results of IR absorption measurements. The ESR measurements for the SiN films revealed that the spin densities of the films deposited at high microwave powers also showed no change at high annealing temperature, while those of the films prepared at a low microwave powers change at an annealing temperature of 400°C.

引用

页码：1094 / 1100

页数：7