ZINC OXYSULFIDE THIN-FILMS GROWN BY ATOMIC LAYER DEPOSITION

The chemical vapor atomic layer deposition technique was used to deposit thin films of ZnO1-xSx on glass and silicon substrates. Film composition was varied from x = 0 to x = 0.95, and measurements of bandgap and resistivity yielded surprising minima at x approximately 0.6. Results of Rutherford backscattering, X-ray, and luminescence measurements are also presented. Both one- and two-phase films are visible in scanning electron microscopy, and an amorphous phase is also apparent. A continuously variable mixed film is not observed due to the large lattice mismatch between ZnO and ZnS.