HIGH-FREQUENCY RESPONSE OF CAPACITORS FABRICATED FROM FINE-GRAIN BATIO3 THIN-FILMS

Fine grain BaTiO3 thin films with a grain size ranging between 100 and 1000 Å were deposited using the reactive partially ionized beam deposition technique at 550-600°C. A metal/insulator/metal structure of these materials was fabricated and the dielectric response was measured up to 40 GHz using a network analyzer. It is shown that these films are not ferroelectric. However, these films show a dielectric relaxation in the frequency interval between several MHz and 1 GHz. We propose that this indicates a relaxation mechanism not related to the ferroelectric domain walls.© 1995 American Institute of Physics.