GROWTH AND DEFECT STRUCTURE OF CDS EPITAXIAL LAYERS ON (111)GE SUBSTRATES

被引：5

作者：

GHEZZI, C

PAORICI, C

PELOSI, C

SERVIDORI, M

机构：

[1] CNR,MASPEC LAB,I-43100 PARMA,ITALY

[2] CNR,LAMEL LAB,I-40126 BOLOGNA,ITALY

来源：

JOURNAL OF CRYSTAL GROWTH | 1977年 / 41卷 / 02期

关键词：

D O I：

10.1016/0022-0248(77)90044-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：181 / 191

页数：11

共 16 条

[1] EPITAXIAL-GROWTH AND STRUCTURE OF CDS FILMS EVAPORATED ONTO GE [J].

ABDALLA, MI ;

HOLT, DB ;

WILCOX, DM .

JOURNAL OF MATERIALS SCIENCE, 1973, 8 (04) :590-600

[2] TRANSPORT REACTION IN CLOSED TUBE PROCESS [J].

ARIZUMI, T ;

NISHINAGA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (03) :165-+

[3] THERMODYNAMICAL CONSIDERATION FOR PREPARATION OF GAAS-GE HETEROJUNCTIONS THROUGH CLOSED TUBE PROCESS [J].

ARIZUMI, T ;

NISHINAGA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (01) :21-+

[4] SOME PROPERTIES OF CDS-P-GE HETEROJUNCTIONS GROWN BY CHEMICAL-TRANSPORT [J].

GHEZZI, C ;

PAORICI, C ;

PELOSI, C .

APPLIED PHYSICS, 1976, 11 (04) :327-335

[5]

Hildisch L., 1968, Journal of Crystal Growth, V3-4Spe, P131, DOI 10.1016/0022-0248(68)90111-5

[6] CRYSTALLOGRAPHIC ORIENTATIONS AND INTERFACIAL MISMATCHES OF SINGLE-CRYSTAL CDS FILMS DEPOSITED ON VARIOUS FACES OF ZINC-BLENDE-TYPE MATERIALS [J].

IGARASHI, O .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) :4035-&

[7]

KARBANOV SK, 1968, VESTNIK MOSKOVSK U K, V23, P93

[8]

KUBASCHEWSKI O, 1967, METALLURGICAL THERMO, P424

[9] TRANSPORT OF SOLID THROUGH GAS PHASE USING A SINGLE HETEROGENEOUS EQUILIBRIUM [J].

LEVER, RF .

JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (06) :1174-&

[10] CLOSED-TUBE CHEMICAL-TRANSPORT MECHANISMS IN CD=TE=H=CL=N SYSTEM [J].

PAORICI, C ;

PELOSI, C ;

ATTOLINI, G ;

ZUCCALLI, G .

JOURNAL OF CRYSTAL GROWTH, 1975, 28 (03) :358-364

← 1 2 →