INFLUENCE OF UV-RADIATION AND SOURCE-TO-BULK BIAS ON THE PROCESSES IN THE SI-SIO2 INVERSION CHANNEL

By measurements of the inversion channel I-V characteristics experimental evidence of a significant reduction of the total positive charge in thin Si-SiO2 structures. after low energy u.v. radiation, is presented. Different models explaining the results in terms of u.v.-stimulated annihilation of defects as well as u.v.-generation of compensating charges are discussed. It is shown that the reverse bias between the inversion channel and the silicon substrate increases the above charge. A model describing this increase, including computer fitting of the experimental curves is proposed.