SEMICONDUCTOR LOGIC TECHNOLOGY IN IBM

被引：13

作者：

RYMASZEWSKI, EJ ^{[1
]}

WALSH, JL ^{[1
]}

LEEHAN, GW ^{[1
]}

机构：

[1] IBM CORP,ARMONK,NY 10504

来源：

关键词：

D O I：

10.1147/rd.255.0603

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：603 / 616

页数：14

共 78 条

[21] CLARK BT, 1981, 31ST P EL COMP C ATL
[22] COHEN L, 1967, P NE ELECTRONICS RES, P170
[23] DESIGN AND CHARACTERISTICS OF N-CHANNEL INSULATED-GATE FIELD-EFFECT TRANSISTORS
CRITCHLOW, DL
DENNARD, RH
SCHUSTER, SE
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1973, 17 (05) : 430 - 442
[24] CRITCHLOW DL, 1968, 1968 P MICR S ST LOU
[25] BIPOLAR CIRCUIT-DESIGN FOR A 5000-CIRCUIT VLSI GATE ARRAY
DANSKY, AH
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (2-3) : 116 - 125
[26] DAVIS DE, 1977, IBM J RES DEV, V21, P498, DOI 10.1147/rd.216.0498
[27] SOLID LOGIC TECHNOLOGY - VERSATILE HIGH-PERFORMANCE MICROELECTRONICS
DAVIS, EM
HARDING, WE
SCHWARTZ, RS
CORNING, JJ
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 102 - &
[28] DECKERT KL, 1966, WESTERN ELECTRONIC S
[29] DIMARIA DJ, 1980, ELECTRON DEVICE LETT, P179
[30] DOMENICO RJ, 1957, IRE T ELECTRON COMPU, V6, P242