GATE TUNNEL CURRENT IN AN MOS-TRANSISTOR

被引：39

作者：

MAJKUSIAK, B

机构：

[1] Institute of Microelectronics and Optoelectronics, Technical University of Warsaw, 00–662, Warsaw

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 04期

关键词：

D O I：

10.1109/16.52446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A theoretical description of gate tunnel current in an MOS transistor is proposed, and the results of calculations for the case of an n-channel MOSFET with extremely thin gate oxides are given. A comparison of the gate tunnel current with the drain current is made. ©1990 IEEE

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收藏

页码：1087 / 1092

页数：6

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