ELECTROLYTIC REMOVAL OF P-TYPE GAAS SUBSTRATES FROM THIN, N-TYPE SEMICONDUCTOR LAYERS

被引：22

作者：

NUESE, CJ

GANNON, JJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1970年 / 117卷 / 08期

关键词：

D O I：

10.1149/1.2407729

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1094 / &

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LEVINE PA, TO BE PUBLISHED

[8] SILVER-MANGANESE EVAPORATED OHMIC CONTACTS TO P-TYPE GALLIUM ARSENIDE [J].

NUESE, CJ ;

GANNON, JJ .

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