MELTBACK AND PULLOVER AS CAUSES OF DISTURBANCES IN LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASP-INP 1.3-MU-M LASER MATERIAL

被引：7

作者：

LADANY, I

SMITH, RT

MAGEE, CW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 10期

关键词：

D O I：

10.1063/1.328544

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6064 / 6067

页数：4

共 11 条

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[3]

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[5] COMPARISON OF SINGLE-PHASE AND 2-PHASE LPE GROWTH METHODS FOR INGAASP-INP LASERS AND LEDS [J].

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[6]

LADANY I, NASA CR3268 NAT TECH

[7] INP-GAXIN1-XASYP1-Y DOUBLE HETEROSTRUCTURE FOR 1.5 MUM WAVELENGTH [J].

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NOGUCHI, Y .

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[8]

OLSEN GH, 1980, J ELECTRON MATER, V9, pQ77

[9] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M [J].

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APPLIED PHYSICS LETTERS, 1978, 33 (04) :314-316

[10] PHOTO-LUMINESCENCE STUDY OF PERTURBED GROWTH OF INP ON QUATERNARY LAYERS IN INGAASP-INP DOUBLE HETEROSTRUCTURES [J].

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THIBIERGE, H .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :228-231

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