COMPARISON OF SINGLE-PHASE AND 2-PHASE LPE GROWTH METHODS FOR INGAASP-INP LASERS AND LEDS

被引：7

作者：

LADANY, I

HAWRYLO, FZ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 54卷 / 01期

关键词：

D O I：

10.1016/0022-0248(81)90251-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：69 / 75

页数：7

共 8 条

[1] LATTICE-CONSTANT, BANDGAP, THICKNESS, AND SURFACE-MORPHOLOGY OF INGAASP-INP LAYERS GROWN BY STEP-COOLING, EQUILIBRIUM-COOLING, SUPERCOOLING AND 2-PHASE-SOLUTION GROWTH TECHNIQUES [J].

FENG, M ;

COOK, LW ;

TASHIMA, MM ;

STILLMAN, GE .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) :241-280

[2] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J].

HSIEH, JJ .

APPLIED PHYSICS LETTERS, 1976, 28 (05) :283-285

[3] BANDGAP AND LATTICE-CONSTANT OF GAINASP AS A FUNCTION OF ALLOY COMPOSITION [J].

MOON, RL ;

ANTYPAS, GA ;

JAMES, LW .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (03) :635-644

[4] BAND-GAP VERSUS COMPOSITION AND DEMONSTRATION OF VEGARDS LAW FOR IN1-XGAXASYP1-Y LATTICE MATCHED TO INP [J].

NAHORY, RE ;

POLLACK, MA ;

JOHNSTON, WD ;

BARNS, RL .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :659-661

[5]

OLSEN G, COMMUNICATION

[6] MISORIENTATION AND TETRAGONAL DISTORTION IN HETEROEPITAXIAL VAPOR-GROWN III-V STRUCTURES [J].

OLSEN, GH ;

SMITH, RT .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (02) :739-747

[7] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M [J].

POLLACK, MA ;

NAHORY, RE ;

DEWINTER, JC ;

BALLMAN, AA .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :314-316

[8] 500-HOUR CW OPERATION OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS FABRICATED ON (100)-INP SUBSTRATES [J].

YAMAMOTO, T ;

SAKAI, K ;

AKIBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) :1699-1700

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