DISLOCATION IMAGING USING ION-BEAM-INDUCED CHARGE

被引：16

作者：

BREESE, MBH ^{[1
]}

KING, PJC ^{[1
]}

GRIME, GW ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MAT,OXFORD OX1 3PH,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 25期

关键词：

D O I：

10.1063/1.109055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The recently developed ion beam induced charge technique has been used to image bands of misfit dislocations in a 4 mum thick epitaxial layer of Si0.875Ge0.125 grown on a Si substrate. The smallest resolvable bandwidth is 0.8 mum under present conditions. The factors which presently limit this value, and methods for improving it are discussed.

引用

页码：3309 / 3311

页数：3

共 5 条

[1] MICROCIRCUIT IMAGING USING AN ION-BEAM-INDUCED CHARGE [J].