DECAY OF EXCESS CARRIERS IN SEMICONDUCTORS .2.

被引：16

作者：

NOMURA, KC

BLAKEMORE, JS

机构：

来源：

PHYSICAL REVIEW | 1961年 / 121卷 / 03期

关键词：

D O I：

10.1103/PhysRev.121.734

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：734 / &

共 7 条

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[3]

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ROSE A, 1957, PROGR SEMICOND, V2, P111

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