A COMPLETE QUANTITATIVE MODEL OF THE ISOTHERMAL VAPOR-PHASE EPITAXY OF (HG,CD)TE

被引：19

作者：

DJURIC, Z ^{[1
]}

DJINOVIC, Z ^{[1
]}

LAZIC, Z ^{[1
]}

PIOTROWSKI, J ^{[1
]}

机构：

[1] INST PLASMA PHYS & LASER MICROFUS,WARSAW 49,POLAND

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 03期

关键词：

D O I：

10.1007/BF02652182

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：223 / 228

页数：6

共 19 条

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[3] ISOTHERMAL GROWTH OF HGCDTE UNDER CONTROLLED HG VAPOR-PRESSURE [J].

BECLA, P ;

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[4] INFRARED PHOTOVOLTAIC DETECTORS UTILIZING HG1-XMNX TE AND HG1-X-YCDXMNY TE ALLOYS [J].

BECLA, P .

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[5]

COHENSOLAL G, 1965, CR HEBD ACAD SCI, V261, P931

[6] GENERALIZED-MODEL OF THE ISOTHERMAL VAPOR-PHASE EPITAXY OF (HG,CD)TE [J].

DJURIC, Z ;

PIOTROWSKY, J .

APPLIED PHYSICS LETTERS, 1987, 51 (21) :1699-1701

[7] ISOTHERMAL VAPOR-PHASE EPITAXY OF MERCURY CADMIUM TELLURIDE [J].

FLEMING, JG ;

STEVENSON, DA .

JOURNAL OF CRYSTAL GROWTH, 1987, 82 (04) :621-627

[8] HIGH-PERFORMANCE PHOTOVOLTAIC INFRARED DEVICES IN HG1-XCDXTE ON GAAS [J].

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[9]

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[10]

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