1.54-MU-M PHOTOLUMINESCENCE OF ERBIUM-IMPLANTED SILICON

被引:22
作者
MOUTONNET, D [1 ]
LHARIDON, H [1 ]
FAVENNEC, PN [1 ]
SALVI, M [1 ]
GAUNEAU, M [1 ]
DAVITAYA, FA [1 ]
CHROBOCZEK, J [1 ]
机构
[1] CTR NATL ETUD TELECOMMUN,RPT,CMD,F-38243 MEYLAN,FRANCE
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期
关键词
D O I
10.1016/0921-5107(89)90219-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:75 / 77
页数:3
相关论文
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KLEIN PB, 1988, ELECTRON LETT, V24, P1503
[3]   BEHAVIOR OF ERBIUM IMPLANTED IN INP [J].
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[4]  
ROLLAND A, 1988, ELECTRON LETT, V24, P957