CHARGE-SENSITIVE PREAMPLIFIER-IC FOR SILICON CALORIMETRY AT COLLIDERS

被引：8

作者：

BATURITSKY, MA

CHEKHOVSKY, VA

EMELYANCHIK, IF

SHUMEIKO, NM

GOLUTVIN, IA

ZAMYATIN, NI

DVORNIKOV, OV

机构：

[1] JOINT INST NUCL RES, DUBNA 141980, RUSSIA

[2] INFORMAT TECHNOL CTR, MINSK 220600, BELARUS

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1995年 / 352卷 / 03期

关键词：

D O I：

10.1016/0168-9002(95)90013-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Four versions of a fast monolithic charge-sensitive preamplifier (CSP) were designed using microwave BJT-JFET technology. The best one has a 3.5 ns rise time for input detector capacitance C-d = 100 pF and approximately 8 mW power dissipation for 5 V supply voltage. The ENC performance at shaping time 30 ns is 1350 e + 17 e/pF for C-d up to 600 pF. Crosstalk in a four-channel amplifier made in the same chip was measured to be about -46 dB for C-d = 100 pF. The linear output voltage swing is 0.8 V for voltage supply 5 V. The IC has revealed good radiation hardness to neutron irradiation.

引用

页码：604 / 609

页数：6