PHASE-LOCKED OPERATION OF A 3-ELEMENT INGAASP/INP GRATING-SURFACE-EMITTING DIODE-LASER ARRAY

被引：5

作者：

PALFREY, SL

HAMMER, JM

LONGEWAY, PA

CARLSON, NW

EVANS, GA

ANDREWS, JT

JAKLIK, J

KIRK, JB

STOLZENBERGER, R

TRIANO, AR

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 14期

关键词：

D O I：

10.1063/1.100698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1296 / 1298

页数：3

共 12 条

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[3]

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[9] HIGHLY COLLIMATED BROADSIDE EMISSION FROM ROOM-TEMPERATURE GAAS DISTRIBUTED BRAGG REFLECTOR LASERS [J].

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[10] CRYSTAL-GROWTH AND PROPERTIES OF BINARY, TERNARY AND QUATERNARY (IN,GA)(AS,P) ALLOYS GROWN BY THE HYDRIDE VAPOR-PHASE EPITAXY TECHNIQUE [J].

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