SEGREGATION EFFECTS IN AG-SI COMPOSITES

被引：14

作者：

BATES, CW

CHEN, QY

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

[2] HOWARD UNIV,MAT SCI RES CTR EXCELLENCE,WASHINGTON,DC 20059

[3] UNIV HOUSTON,TEXAS CTR SUPERCONDUCT,HOUSTON,TX 77004

来源：

MATERIALS LETTERS | 1995年 / 23卷 / 1-3期

关键词：

D O I：

10.1016/0167-577X(94)00268-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ag-Si composites prepared by co-sputtering the components onto sapphire substrates are found to result in the Ag rapidly segregating to the Si surface if both sputtering sources are shut off at the same time. If the Si source is allowed on for a period of time after shutting off the Ag source this segregation does not occur and the Ag is uniformly distributed throughout the Ag-Si composite. Though strain considerations or a ''kick-out'' mechanism may be used to explain this segregating effect, it is not clear why the Ag-Si/Si interface prevents Ag segregation at the free Si-vacuum surface, though the alpha Si overlayer may provide a sufficient diffusion barrier to prevent the Ag from segregating.

引用

页码：7 / 12

页数：6