INFRARED RESPONSE FROM METALLIC PARTICLES EMBEDDED IN A SINGLE-CRYSTAL SI MATRIX - THE LAYERED INTERNAL PHOTOEMISSION SENSOR

被引：42

作者：

FATHAUER, RW

IANNELLI, JM

NIEH, CW

HASHIMOTO, S

机构：

[1] CALTECH,KECK LAB ENGN,PASADENA,CA 91125

[2] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222

[3] SUNY ALBANY,INST PARTICLE SOLID INTERACT,ALBANY,NY 12222

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 14期

关键词：

D O I：

10.1063/1.103453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Infrared radiation at wavelengths of 1-2 μm has been detected in a new device labeled the layered internal photoemission sensor. The device structure, which is grown by molecular beam epitaxy, incorporates epitaxial CoSi 2 particles with dimensions of 10-50 nm. Radiation absorbed by these particles photoexcites carriers into a surrounding single-crystal silicon matrix. A peak quantum efficiency of 1.3% is measured, which is approximately six times higher than in planar CoSi2 Schottky diodes with 5 nm silicide thickness.

引用

页码：1419 / 1421

页数：3

共 8 条

[1] GROWTH OF SINGLE-CRYSTAL COLUMNS OF COSI2 EMBEDDED IN EPITAXIAL SI ON SI(111) BY MOLECULAR-BEAM EPITAXY [J].