HIGH-FREQUENCY FET NOISE PARAMETERS AND APPROXIMATION OF OPTIMUM SOURCE ADMITTANCE

被引：7

作者：

LEUPP, A

STRUTT, MJO

机构：

[1] Department of Advanced Electrical Engineering, Swiss Federal Institute of Technology, Zürich

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1969年 / ED16卷 / 05期

关键词：

D O I：

10.1109/T-ED.1969.16772

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-frequency noise parameters of junction FETs and. MOSFETs have been determined experimentally. It is shown that the usual noise specifications given in present-day data sheets are not sufficient to describe the noise behavior. A very important noise parameter is the source admittance. However, the exact evaluation of the optimum source admittance, which yields the minimum noise figure, is very complicated. An approximative method is thus described which gives good results and is in good agreement with the experiment. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：428 / &

共 13 条

[1] BRUNCKE WC, 1966, IEEE T ELECTRON DEVI, VED13, P323
[2] Haus H.A., 1960, P IRE, V48, P69, DOI [10.1109/jrproc.1960.287381, DOI 10.1109/JRPROC.1960.287381]
[3] JORDAN AG, 1965, IEEE T ELECTRON DEVI, VED12, P148
[4] KLAASSEN FM, 1967, PHILIPS RES REP, V22, P505
[5] KLAASSEN FM, 1967, IEEE T ELECTRON DEVI, VED14, P368
[6] NOISE BEHAVIOUR OF MOSFET AT VHF AND UHF
LEUPP, A
STRUTT, MJO
[J]. ELECTRONICS LETTERS, 1968, 4 (15) : 313 - &
[7] COMPARISON OF CALCULATED NOISE FIGURES FROM PARAMETERS OF A JFET WITH MEASURED TOTAL NOISE FIGURES
LEUPP, A
STRUTT, MJO
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (12) : 1221 - &
[8] NOISE PARAMETERS FOR METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
MAVOR, J
[J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09): : 1463 - &
[9] MAVOR J, 1967, IEEE T ELECTRON DEVI, VED14, P111
[10] SHOJI M, 1966, IEEE T ELECTRON DEVI, VED13, P520

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