DIRECT INDIRECT GAP INTERVALLEY SCATTERING OF ELECTRONS IN TLBR ELECTRON-HOLE PLASMA

被引：5

作者：

PELANT, I

KOHLOVA, V

HALA, J

AMBROZ, M

VACEK, K

机构：

[1] Charles Univ, Prague, Czech, Charles Univ, Prague, Czech

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 64卷 / 06期

关键词：

ELECTRON-HOLE PLASMA - INTERVALLEY SCATTERING - THALLIUM BROMIDE;

D O I：

10.1016/0038-1098(87)90566-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：939 / 942

页数：4

共 7 条

[1]

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[3] AUGER RECOMBINATION IN DIRECT-GAP SEMICONDUCTORS - BAND-STRUCTURE EFFECTS [J].

HAUG, A .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (21) :4159-4172

[4] LUMINESCENCE OF DIRECT-GAP AND INDIRECT-GAP ELECTRON-HOLE PLASMA IN TIBR [J].

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AMBROZ, M ;

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[5] THERMODIFFUSION OF HIGH-DENSITY ELECTRON-HOLE PLASMAS IN SEMICONDUCTORS [J].

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SCHMID, W .

PHYSICAL REVIEW LETTERS, 1981, 47 (25) :1855-1858

[6] ABINITIO CALCULATION OF THE ELECTRONIC-STRUCTURE OF THALLOUS HALIDES .2. ONE-PARTICLE STATES - WANNIER FUNCTIONS, BAND STRUCTURES, AND DENSITIES OF STATES [J].

SCHREIBER, M ;

SCHAFER, W .

PHYSICAL REVIEW B, 1984, 29 (04) :2246-2254

[7]

UETA M, 1986, SPRINGER SERIES SOLI, V60, pCH7

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