ELECTROLUMINESCENCE IN ALXGA1-XP DIODES PREPARED BY LIQUID-PHASE EPITAXY

被引：12

作者：

KRESSEL, H

LADANY, I

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 11期

关键词：

D O I：

10.1063/1.1655973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5339 / &

共 9 条

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[5] PREPARATION AND OPTICAL PROPERTIES OF ALXGA1-XP [J].

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LYNCH, RT .

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[6]

NELSON H, 1963, RCA REV, V24, P603

[7]

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[8] EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300 DEGREES K FROM GA1-XALXAS P-N JUNCTIONS GROWN BY LIQUID-PHASE EPITAXY [J].

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[9] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J].

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