HIGH-EFFICIENCY WAVE-GUIDE-COUPLED LAMBDA = 1.3 MU-M INXGA1-XAS/GAAS MSM DETECTOR EXHIBITING LARGE EXTINCTION RATIOS AT L-BAND AND X-BAND

被引：11

作者：

NG, W

NARAYANAN, A

HAYES, RR

PERSECHINI, D

YAP, D

机构：

[1] Hughes Research Laboratories, Malibu, CA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 05期

关键词：

Extinction ratio - Metal-semiconductor-metal - Optoelectronic switch - Waveguide-coupled strained-layer detector;

D O I：

10.1109/68.215266

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the design and fabrication of a lambda = 1.3 mum waveguide-coupled strained-layer InxGa1-xAs/GaAs MSM detector with an optimized active layer thickness. For 100 mum long devices, we observed a responsivity of 0.58 mA/mW. Using the detector as an optoelectronic switch, we achieved on/off ratios that were better than 40 dB at L and X band.

引用

收藏

页码：514 / 517

页数：4

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