ELECTROLESS PLATING OF COPPER AT A LOW PH LEVEL

被引:43
作者
JAGANNATHAN, R
KRISHNAN, M
机构
关键词
D O I
10.1147/rd.372.0117
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A new process for electroless copper plating at a pH level of less-than-or-equal-to 9 is described. The process uses amine borane reducing agents and ligands based on neutral tetradentate nitrogen donors. The use of a variety of buffer systems is demonstrated. Electroless bath performance over a wide range of conditions is presented. The quality of the plated copper is comparable to that obtained by currently used electroless plating processes, and has a resistivity of about 1.8-2 muOMEGA-cm, depending on bath composition and process parameters. Use of the process is illustrated for forming conductors and filling via holes having submicron minimum dimensions.
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页码:117 / 123
页数:7
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