CONDENSATION OF BOMBARDING GALLIUM IONS ON A SILICON SURFACE

被引：19

作者：

ISHITANI, T

SHIMASE, A

TAMURA, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 08期

关键词：

D O I：

10.1063/1.92827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：627 / 628

页数：2

共 12 条

[1] MINIATURE ION SOURCES FOR ANALYTICAL INSTRUMENTS [J].

CLAMPITT, R ;

JEFFERIES, DK .

NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :739-742

[2] FIELD-EMISSION DEPOSITION SOURCES [J].

CLAMPITT, R .

THIN SOLID FILMS, 1979, 58 (01) :129-132

[3]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[4]

ISHITANI T, 1981, 5TH P S ION SOURC IO, P129

[5]

KOMURO M, 1981, 5TH P S ION SOURC IO, P45

[6] ION-SOURCE OF HIGH BRIGHTNESS USING LIQUID-METAL [J].

KROHN, VE ;

RINGO, GR .

APPLIED PHYSICS LETTERS, 1975, 27 (09) :479-481

[7] DRY DEVELOPMENT OF RESISTS EXPOSED TO FOCUSED GALLIUM ION-BEAM [J].

KUWANO, H ;

YOSHIDA, K ;

YAMAZAKI, SI .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L615-L617

[8]

PREWETT PD, 1980, I PHYS C SER, V54, P316

[9] HIGH-INTENSITY SCANNING ION PROBE WITH SUBMICROMETER SPOT SIZE [J].

SELIGER, RL ;

WARD, JW ;

WANG, V ;

KUBENA, RL .

APPLIED PHYSICS LETTERS, 1979, 34 (05) :310-312

[10]

TOWNSEND PD, 1976, ION IMPLANTATION SPU, pCH6

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