AG/AL SCHOTTKY CONTACTS ON N-INP

被引：15

作者：

DUNN, J

STRINGFELLOW, GB

机构：

来源：

关键词：

D O I：

10.1007/BF02652149

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：181 / 186

页数：6

共 22 条

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[7] A COMPARISON OF PD SCHOTTKY CONTACTS ON INP, GAAS AND SI
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[8] HOKELEK E, 1983, J APPL PHYS, V54, P5199, DOI 10.1063/1.332745
[9] ON THE NATURE OF OXIDES ON INP-SURFACES
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