ELECTRON-HOLE PAIR PRODUCTION AND GUNN EFFECT IN INSB

被引：24

作者：

POROWSKI, S

PAUL, W

MCGRODDY, JC

NATHAN, MI

SMITH, JE

机构：

[1] Division of Engineering and Applied Physics, Harvard University, Cambridge

[2] IBM Watson Research Center, Yorktown Heights

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 13期

关键词：

D O I：

10.1016/0038-1098(69)90539-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A study of the low and high field transport properties, the Gunn effect and avalanche breakdown as a function of pressure in n-InSb has been used to obtain information about the properties of higher conduction band minima and impurity levels associated with them. © 1969.

引用

页码：905 / &

共 6 条

[1]

DEMCHUK, 1965, SOVIET PHYS SOLID ST, V7, P1257

[2] BAND STRUCTURE OF INTERMETALLIC SEMICONDUCTORS FROM PRESSURE EXPERIMENTS [J].